| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| CDBURT0230L-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
| 1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes
5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PMEG1020EJ PMEG1020EH |
PMEG1020EJ; 10 V, 2 A ultra low Vf MEGA Schottky barrier rectifier in SOD323F package
PMEG1020EH; 10 V, 2 A ultra low Vf MEGA Schottky barrier rectifier in SOD123F package
10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
|
PHILIPS[Philips Semiconductors]
|
| SBR2080R |
20.0 Amp Low VF Schottky Barrier Rectifiers
Voltage 80V 20.0Amp Low VF Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| CMS03 |
Schottky Barrier Rectifier Trench Schottky Barrier Type Switching Mode Power Supply Applications Portable Equipment Battery Applications
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR411 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR393S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| SBL10U100D1 SBL10U100D1-15 |
Low VF Trench Barrier Schottky Rectifier
Voltage 100V 10.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NSR01F30NXT5G10 NSR01F30 |
30 V, 100 mA, Low Vf Schottky, DSN2 (0201)
Schottky Barrier Diode
|
ON Semiconductor
|
